【摘要】 采用射频溅射法制备了ＰＺＴ铁电薄膜材料，测量了薄膜材料的介电常数和电滞回线，分析了薄膜的成分。ＸＲＤ分析结果表明，溅射形成的ＰＺＴ薄膜的结构和铁电性能强烈依赖于成膜工艺中的衬底温度。薄膜的居里点为２５０℃左右，靶的组成以Ｐｂ１．１０（Ｚｒ０．５２Ｔｉ０．４８）Ｏ３为宜。更多还原

【Abstract】  Pb₁.10 （Zr_0.52Ti₀.48）O₃ ferroelectric thin film is prepared by RF sputtering The electric permittivity and hysteresis loops are measured the composition of thin film is analyzed with XRD The results show that the structure and the ferroelectric properties of PZT thin film strongly depend on the substrate temperature The Curie point is about 250℃ The optimized composition for the target is Pb₁.10（Zr₀.52Ti₀.48）O₃（3 refs）更多还原