【摘要】 本文用选择铌膜刻蚀或选择铌膜阳极氧化过程研究了全铌隧道结Ｎｂ／ＡｌＯｘＡｌ／Ｎｂ的制备．借助于ＳＥＭ，利用曝光后烘烤处理研究了高质量光刻胶图形的制备工艺，并分析了其对铌结特性的影响．结面积为７μｍ２的铌结具有典型的ＩＶ曲线，在４．２Ｋ时，他们的特性参数Ｖｍ～２０ｍＶ，能隙电压Ｖｇ～２．７ｍＶ，临界电流密度Ｊｃ～３０００Ａ／ｃｍ２，比电阻ρｎ～１μΩｃｍ２．这些铌结能够被直接应用于ｄｃＳＱＵＩＤ．更多还原

【Abstract】 Abstract The fabrication of Nb/AlO x Al/Nb tunnel junctions is investigated using selective niobium etching process and selective niobium anodization process. High quality photolithographic patterning making use of post exposure bake is studied by means of SEM, and its influence on the junction characteristics is analyzed. Junctions with an area of 7μm 2 show typical I V characteristics, and at 4.2K, their quality parameters are: V m ～20mV, gap voltage V g ～2.7mV, critical current density J c ～3000A/cm 2, and specific resistance ρ n ～1μΩcm 2. These junctions can be applied to dc SQUID directly.更多还原