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ACRT-B法晶体生长过程的传质模型

SOLUTE TRANSPORT MODEL OF ACRT-B CRYSTAL GROWTH PROCESS

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【作者】 刘晓华郭喜平介万奇徐嵬周尧和

【Author】 LIU Xiaohua;GUO Xiping;JIE Wanqi;XU Wei;ZHOU Yaohe (State Key Laboratory of Solidification Processing, Northwestern Polytechnical University,Xi’an 710072, China)

【机构】 西北工业大学凝固技术国家重点实验室!西安市710072

【摘要】 基于对ACRT-B法晶体生长时对流及传质特性的认识,提出了ACRT-B法晶体生长过程的一维传质模型得到了包括初始过渡区、稳态区及终端过渡区轴向成分分布的解析解定量计算结果表明,与传统Bridgman法相比,在生长参数不变的条件下,运用ACRT会失去部分轴向成分均匀区在保证ACRT提高结晶度及径向成分均匀性的前提下,适当提高生长速度,选择尽可能小的坩埚最大转速面Δωmax或选用长径比更大的坩埚,是改善ACRT-B晶锭轴向成分均匀性的有效而可行的途径

【Abstract】 Based on the present knowledge of convective flow and solute transport during ACRT-B crystal growth process, a one-dimensional soIute transport modeI of ACRT-B cyStal grwthis presented. AnalyticaI results of axial solute distribution applicable to the initial transient region, the steady-state region and the final transient region are obtained. In comparison with the traditional Bridgman method- ACRT-B process with the same Bridgman parameters will decrease the axial compositional uniform region. On the premise of assuring the effect of ACRT-B process on promoting crystallinity and radial compositional uniformify efFective and applicable ways to decrease the loss of axial compositional uniform region are properly increasing growth rate, selecting possibly small maximum rotation rate or using the ampoule with a much larger aspect ratio L R-1

【关键词】 晶体生长ACRT-B法传质模型
【Key words】 crystal growthACRT-B methodsolute transport model
  • 【文献出处】 材料研究学报 ,CHINESE JOURNAL OF MATERIAL RESEARCH , 编辑部邮箱 ,1998年04期
  • 【分类号】O78
  • 【被引频次】2
  • 【下载频次】52
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