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一步法电沉积CuInSe2半导体膜
Electrodeposition of CuInSe\-2 Film by OneStep Method
【摘要】 在以InCl3、CuCl、SeO2为主盐,酒石酸为络合剂,聚乙二醇和硫脲为添加剂的电镀液中,在Mo片或Ti片上进行阴极电沉积,可获得CuInSe2半导体膜,它与CdS组成的n-CdS/p-CuInSe2光电池光电效率可达7%~8%,部分达11%。
【Abstract】 Abstract Electrodeposition of CuInSe\-2 film on Mo or Ti plate from the solution containing InCl\-3,CuCl,SeO\-2,tartaric acid (complexing agent) and small amount of additives was investigated.The nCdS/pCuInSe\-2 photoelectric cell was then built.The photoelectric efficiency was 7% ̄8%,some could reach 11%.
【基金】 云南省自然科学基金
- 【文献出处】 材料保护 ,MATERIAIS PROTECTION , 编辑部邮箱 ,1998年07期
- 【分类号】TQ153.2
- 【被引频次】7
- 【下载频次】111