【摘要】 用In₂O₃作敏感膜研制出小型固态高感度（sensibilty）(10×10^-91×10^-6O₃传感器.研究了膜厚、气体湿度和工作温度等对传感器敏感特性的影响,发现AET（AdsorptionEffect Transistor）型O₃传感器具有灵敏的响应特性.并分析了薄膜表面的化学吸附及其对薄膜电导的影响,以及AET作用对O₃非常敏感的物理机制.更多还原

【Abstract】 A highly sensible (10 × 10-9~1 × 10-6 )O3 gas sensor has been studied using anIn2O3 semiconductor thin film, especially the dependence of sensiblity characteritics of theO3 sensor on thin film thickness, gas humidity and operating temperature. It is found thatthe Adsorption Effect Transistor (AET) type O3 gas sensor has a high sensibility to lowconcentrations of O3. Chemisorption in the In2O3 film surface which has an effect on filmconductivity and mechanism of AET effect which is sensitive to O3 have been discussed.更多还原