【摘要】 目的研究CVD金刚石薄膜的介电性能．方法采用直流电弧等离子体CVD制备金刚石薄膜，测定其结构和介电性能（频率与电导、介电常数及损耗因子的关系）．结果CVD金刚石薄膜的介电性能主要取决于样品的多晶性质，以及表面和晶界处的非金刚石相和杂质成分．在500℃下对样品进行退火可以除去其中的大部分非晶石墨相，但不能去除所有的非晶石墨相和杂质．结论CVD金刚石薄膜如果要在电子器件上获得应用，在样品的制备和后处理方面还有许多工作要做．更多还原

【Abstract】 Aim To study the dielectric properties of diamond film. Methods Dielectric properties (the frequency dependenCe of conductance, permittivity, and loss factor) of diamond film preped by DC are plasma jet chemical vapor deposition (CVD) were studied. Resuls Dielectric properties of CVD diamond fAn depend mainly on its polycrystalline nature, and the presence of non-diamond disordered graphitic regions and impurities between diamond grains of the film. Annealing at 500℃ leads to the removal of greater part of disordered graphitic regions, but am not remove all disordered graphitic regions and impurities. Conclusion Much work nab to be done tO prepare or post-treat diamond films before using CVD diamond as a substrate for electronic devices.更多还原