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过冷度对Ⅲ-Ⅴ族五元系化合物AlGaInPAs LPE生长的影响
The Effect of Supercool on Liquid Phase Epitaxy Growth of ⅢⅤ Quinary AlGaInPAs
【摘要】 计算了Ⅲ-Ⅴ族五元系化合物AlGaInPAs与GaAs晶格匹配时的等能隙曲线以及液相外延生长AlGaInPAs/GaAs所用母液中Al的分凝系数。实验证明,由于Al的分凝,使过冷度对Al-GaInPAs外延层的固相组分有显著影响,但对外延层的其他性质没有影响。
【Abstract】 The contour of the energy bandgap of ⅢⅤ quinary,AlGaInPAs,lattice matched to GaAs has been calculated,and the segregation coefficient of Al in the solution used for growing AlGaInPAs/GaAs has been analysised.The effect of supercool on the solid composition of AlGaInPAs on GaAs,resulted from Al’s segregating from the solution,has been demonstrated experimentally,no effect on other characteres was found.
【关键词】 五元系;
AlGaInPAs;
液相外延;
过冷度;
【Key words】 Quinary; AlGaInPAs; liquid phase epitaxy(LPE); supercool;
【Key words】 Quinary; AlGaInPAs; liquid phase epitaxy(LPE); supercool;
【基金】 国家自然科学基金
- 【文献出处】 北京大学学报(自然科学版) ,ACTA SCICENTIARUM NATURALUM UNIVERSITIS PEKINESIS , 编辑部邮箱 ,1998年05期
- 【分类号】TN304.054
- 【下载频次】31