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掺Er硅的发光机理的探讨及其应用前景的展望
Investigation of Erbium-doped silicon luminescenceand prospects for applications
【摘要】 本文探讨了硅掺入稀土元素Er后能发出波长为1540nm的光的机理,对影响其发光特性的温度猝灭现象作了初步分析,最后指出了将其实用化还必须解决的一些问题。
【Abstract】 The mechanism of the erbium-doped silicon(EDS) emitting 15400nm light has been studied and we analyze the temperature dependence of luminescence quenching which is major obstacle to its application. We also discuss some other problems which should be resolved before it can be applied.
- 【文献出处】 半导体杂志 , 编辑部邮箱 ,1998年03期
- 【分类号】TN304.120.1,O472.3
- 【被引频次】1
- 【下载频次】47