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GSMBE生长掺杂Si及GeSi/Si合金及其电学性质研究

GSMBE Growth and Doping of Si, SiGe/Si Alloys and Their Electric Characterizations

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【作者】 刘学锋刘金平李建平李灵霄孙殿照孔梅影林兰英

【Author】 Liu Xuefeng, Liu Jinping, Li Jianping, Li Lingxiao, Sun Dianzhao, Kong Meiying, Lin Lanying(Material Center, Institute of Semiconductors, The Chinese Academy of Sciences, Beijing 100083)

【机构】 中国科学院半导体研究所材料中心

【摘要】 用气态源分子束外延法对Si及GeSi/Si合金进行了N、P型掺杂研究,结果表明,杂质在外延层中的掺入行为取决于生长过程中乙硅烷与相关掺杂气体的竞争吸附与脱附过程,所获得的N型及P型载流子浓度范围分别为1.5×1016~4.0×1019cm-3及1.0×1017~2.0×1019cm-3,基于对N型Si外延材料中迁移率与杂质浓度、温度的关系,我们用Klaassen模型对实验结果进行拟合,分析了不同散射机制,特别是少数载流子电离散射对迁移率的影响.此外,样品的二次离子谱及扩展电阻分析表明,N、P型杂质浓度纵向分布较为均匀,无明显的偏析现象.

【Abstract】 Abstract Doping characterizations of Si and SiGe layers grown by GSMBE have been studied. It is found that the machanism for the dopants incorporation into the epitaxial layers depend on the competitive adsorption and desorption processes of the reactive gas molecules on the surface. The carrier concentration of the N type and P type epitaxial layers can be well controlled and varied in the ranges of 1 5×10 16 ~4 0×10 19 cm -3 and 1 0×10 17 ~2 0×10 19 cm -3 , respectively. Based on a unified mobility model proposed by Klaassen, the experimental results are analysed by simulations and taken into ancount the minority impurity scattering. For the carrier concentration distribution along the growth direction, no strong surface segregation is observed.

【基金】 国家“九五”攻关项目
  • 【文献出处】 半导体学报 ,CHINESE JOURNAL OF SEMICONDUCTORS , 编辑部邮箱 ,1998年12期
  • 【分类号】TN304.205.4
  • 【下载频次】35
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