【摘要】 用低能量氩离子束轰击肖特基势垒二极管芯片背面，能有效减小反向电流和理想因子，增高势垒高度和减小势垒电容．对于较大的轰击能量和束流密度，特性改善的效果较显著．但过长的轰击时间会使改善的程度减小，甚至可能使特性变坏．实验证明，势垒特性的改善与界面态和固定电荷密度的减小有关．文中利用应力补偿机理对结果进行分析更多还原

【Abstract】 Abstract Results show that the low energy argon ion beam bombard the backsurface of Schottky barrier diods can effectively decrease the reverse current and ideality factor, increase the barrier height and decrease the barrier capacitance. The effects are related to the ion energy, beam intensity and bombardment time. It is proved that the improvement of barrier characteristics is related to the decrease of interface state density and fixed charge density. Stress compensation may be used to explain the experimental results.更多还原