【摘要】 本文在国内首次报道了利用ＩｎＡｓ外延薄膜制作霍尔器件，通过分子束外延技术在ＧａＡｓ衬底上生长的ＩｎＡｓ薄膜具有较高的迁移率和较好的温度特性．用这种材料制作的霍尔器件在每千欧姆内阻条件下灵敏度与ＧａＡｓ平面Ｈａｌ器件相比提高了５０％．更多还原

【Abstract】 Abstract This paper reports InAs thin films grown on GaAs (001) substrates by Molecular Beam Epitaxy(MBE) with good crystal quality, high electron mobility and small temperature dependence. Hall effect devices with sensitivity 50% higher than GaAs planar Hall effect devices are produced using these films.更多还原