【摘要】 本文报道我们率先研制出的３～５．３μｍＩｎｘＧａ１－ｘＡｓ／ＡｌｙＧａ１－ｙＡｓ／ＡｌｚＧａ１－ｚＡｓ非对称台阶量子阱红外探测器的制备和性能．该探测器具有光伏特征，７７Ｋ温度、±７Ｖ外偏压下的５００Ｋ黑体探测率达到约１．０×１０１０ｃｍ·Ｈｚ１／２／Ｗ，并且，与１→２子带间跃迁相对应的光电流峰值响应波长可随外偏压在中红外（３～５．３μｍ）波段作适当调谐．运用平面波展开法，依据样品的阱、垒结构参数，计算了ＩｎｘＧａ１－ｘＡｓ／ＡｌｙＧａ１－ｙＡｓ／ＡｌｚＧａ１－ｚＡｓ非对称台阶量子阱１→２子带间跃迁的Ｓｔａｒｋ效应，其结果与相应的实验观测结果符合得很好更多还原

【Abstract】 Abstract For the first time, In x Ga 1- x As/Al y Ga 1- y As/Al z Ga 1- z As asymmetric step quantum well mid infrared (3￣5 3μm) detectors are fabricated successfully. The devices display both photovoltaic type response and bias controlled modulation of the peak position of the photocurrent response ascribed to the 1→2 intersubband transitions (ISBT) in the quantum wells. The black body detectivity ( D * bb ) reaches to about 1 0×10 10 cm·Hz 1/2 /W at 77K under a bias of ±7V. By expanding the electron wave function in terms of normalized plane wave basis within the framework of the effective mass envelope function theory, the Stark effects of the 1→2 ISBT in the asymmetric step wells are calculated. The obtained results agree well with the corresponding experimental measurements.更多还原