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超薄栅介质膜生长前硅表面处理的研究
The Study of Si SurfaceTreating BeforeGrowing UltraThin Gate Dielectric Films
【摘要】 在超薄栅介质膜的制备技术中,膜生成前,用稀HF酸进行表面处理,能使生成的超薄膜均匀性、完整性提高,从而使膜的击穿、漏电得到改善。
【Abstract】 Surfacetreating using the dilute HF before growth of dielectric films has been investigated in the preparation of ultrathin gate dielectric films.Surfacetreating can increase the uniformity and the integrality of ultrathin films,then improve breakdown characteristics and decrease leakage current of the films.
- 【文献出处】 半导体技术 ,SEMICONDUCTOR TECHNOLOGY , 编辑部邮箱 ,1998年04期
- 【分类号】TN304.12,TN305.2
- 【下载频次】44