【摘要】 研究了埋入ＳｉＯ２薄膜中的Ｇｅ，Ｓｉ，Ｃ微晶的电学性质与温度的关系。结合对光致发光（ＰＬ）的测量、电导激活能、电导与发光强度和峰位关系的测量发现，当测量温度高于６０℃时，埋入ＳｉＯ２膜中的Ｇｅ，Ｓｉ，Ｃ微结构具有半导体导电规律，尽管Ｃ／ＳｉＯ２复合膜在室温至６０℃之间表现出金属导电性质。对电导和ＰＬ机制进行了讨论。更多还原

【Abstract】 The dependence of electric properties on the measuring temperature of Ge,Si and C microcrystals embedded in SiO 2 films is investigated.In accordance with the measurement of photoluminescence(PL),and the measurement of dependence of the conduction activation energy and the conduction ability on the PL intensity and the PL peaks,it is found that when the measuring temperature is higher than 60 ℃,Ge(Si,C) microcrystals embedded in SiO 2 films exhibit regular semiconductor conduction properties,although C/SiO 2 films show metal conduction properties from room temperature to 60 ℃.The conduction and PL mechanism of Ge(Si,C) microcrystals embedded in SiO 2 films are also discussed.更多还原