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高阻P型硅PN结中的光电转换
Photoelectric conversion in PN junction of high-pure P-type silicon
【摘要】 用高阻P型硅(ρ=12000Ω·cm)单晶材料制作了PN结光敏二极管,对二极管的光电参数进行了测量。在激光辐射下,测出样管在光照前后的C—V实验曲线及样管在光照前后的电容相对变化可达到100%,远大于低阻P型硅PN结在光照前后电容的相对变化率,并得到零偏下样管电容在光照前后的相对变化率为121.7%。
【Abstract】 The PN junction photodiodes made from high-pure P-type silicon (ρ=12 000 Ω·cm)are fabricated,and their photoelectric parameters are measured.It shows that the capacitance variation of photoelectric varactor diodes described in this paper is much larger than that of PN junction with and without illumination.The relative variation ratio of the capacitance in the sample is ~100%,and that of 121.7% is obtained under zero voltage.
【关键词】 半导体光电器件;
光敏二极管;
光电容;
PN结;
【Key words】 Semiconductor Optoelectronic Devices; Photodiodes; Photocapacitance; PN Junction;
【Key words】 Semiconductor Optoelectronic Devices; Photodiodes; Photocapacitance; PN Junction;
- 【文献出处】 半导体光电 ,SEMICONDUCTOR OPTOELECTRONICS , 编辑部邮箱 ,1998年03期
- 【分类号】TN364.1
- 【被引频次】4
- 【下载频次】156