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铁电薄膜与底电极之间界面的异质结效应

The Heterojunction Effect at the Interface of Ferroelectric Thin Film and Bottom Electrode

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【作者】 黄龙波; 刘殊松; 龙浩; 干煜军;

【Author】 Huang Longbo; Liu Shushong; Long Hao;Gan Yujun(Wuhan Research Institute of Posts & Telecommunications, Wuhan, 430074 )

【机构】 武汉邮电科学研究院固体器件研究所!武汉430074;

【摘要】 铁电薄膜与底电极之间由于高温扩散而形成了界面层,且观察到其对薄膜电性能的影响类似于硅衬底上铁电薄膜的异质结效应。基于能带理论的考虑,建立物理模型来解释其影响。该界面异质结模型不仅可以解释铁电薄膜的界面分层、电滞回线不对称等现象,而且还成功地解释了电滞回线中心在极化轴上的偏移和疲劳循环过程中的偏移增加,并探讨了这种偏移对铁电薄膜疲劳特性的影响。

【Abstract】 The interface layer between the ferroelectric thin film and the bottom electrode is formed by high-temperature interdiffusion,and it is observed that the interface layer affects the electrical properties of ferroelectric thin film analogous to the heterojunction effect of ferroelectric thin film on silicon substrate. A physical model based on the energy-band theory is proposed to explain this effect. The interface heterojunction model can not only explain successfully the interface layers,asymmetrical hysteresis loops,etc. of ferroelectric thin film,but also the loop centre shift in polarization axis and the shift rise in fatigue cycles. The effect of this shift on the fatigue characteristics of ferroelectric thin film is discussed also.

  • 【分类号】TB43
  • 【被引频次】12
  • 【下载频次】192
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