【摘要】 通过溅射Nb膜张力与氩（Ar）压强的关系，超导转变温度Tc，室温阻扰与液氮温度阻抗比RRT／RLN2，沉积中Ar浓度CAr与负偏压关系的测量和扫描电子显微镜的观察分析，对约瑟夫森结Nb电极作了研究。发现Ar压强在1．1Pa时，Nb膜呈现无应力状态；低负偏压下沉积的Nb膜晶粒结构是由致密膜到圆柱状。在偏压Ub＝－50V时，获得表面致密均匀、晶粒结构合适的Nb膜。对Nb膜用阳极氧化电压谱图（AVS）分析，证实沉积的Nb膜内不存在氧化物、寄生结和分层界面。更多还原

【Abstract】 We have studied the Nb electrode for the Josephson junction by measuring dependence of sputtered Nb fi1m stress on Ar pressure,transition temperature,resistance ration(RRT/RLN2 )and Ar concentration in sputtering deposition on negative bias voltage. We have found that zero stress occures at 1. 1 Pa and that the Nb film grain structure form a compact film at low negative bias voltage to columnar and that the Nb film with the finest grain structure and smoothest surface is obtained at a bias voltage Ub= - 50 V.By analysing anodisation voltage spectroscopy (AVS),we have confirmed that the oxide, parasitical junction and interfaces of separate layers do not exist in Nb films deposited.更多还原