【摘要】 利用X射线光电子谱（XPS）、扫描俄歇微探针（SAM）、X射线衍射（XRD）和差热-热重（DTA－TG）等多种分析技术，对由溶胶凝胶（Sol-Gel）法制备的Pd－SnO2薄膜试样的结构作了综合表征，系统地研究了热处理过程中试样结构及试样中Pd和Sn元素化学状态的变化规律。更多还原

【Abstract】 In this paper,the structures of Pd-doped SnO2 thin films prepared by Sol-Gel are characterized comprehensively using XPS,SAM,XRD and DTA-TG techniques. It is observed that the structures of the thin films and the chemical states of Pd and Sn in the thin films change with the themal treatment.Doped Pd deceased the Fermi level of SnO2 semiconductor by about 0. 2 eV.更多还原