节点文献

Photoluminescence from C+ -implanted SiO2 films thermally grown on crystalline silicon

  • 推荐 CAJ下载
  • PDF下载
  • 不支持迅雷等下载工具,请取消加速工具后下载。

【作者】 廖良生; 侯晓远;

【Author】 LIAO Liangsheng and HOU Xiaoyuan(State Key Laboratory of Surface Physics and T. D. Lee Physics Laboratory, Fudan University, Shanghai 200433, China)

【机构】 State Key Laboratory of Surface Physics and T. D. Lee Physics Laboratory; Fudan University; Shanghai 200433; China; China;

【摘要】 <正> Silicon is the most important semiconductor material. In order to realize Si-based optoelectronic integration, the studies of Si-based light-emitting materials attract much attention. Recently, the SiO2 film grown on crystalline silicon is being studied as a kind of light-emitting materials, because its preparation is fully compatible with the current silicon planar technique and it has been widely used in microelectronic integrated circuits as resistance masks or dielectric films.

【基金】 Project supported by the Post-Doctoral Science Foundation of China;Chiatai Foundation of T. D. Lee Physics Laboratory;Fudan University.
  • 【文献出处】 Progress in Natural Science ,自然科学进展(英文版) , 编辑部邮箱 ,1997年04期
  • 【分类号】O484.4
  • 【下载频次】18
节点文献中: 

本文链接的文献网络图示:

本文的引文网络