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Ce掺杂对SnO2薄膜电学及气敏性能的影响

Effect of Ce Dopant on the Electrical and Gas Sensing Properties of SnO 2 Thin Films Prepared by the Sol Gel Technique

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【作者】 方国家刘祖黎张增常王昕玮姚凯伦

【Author】 Fang Guojia, Liu Zuli( Department of Physics, Huazhong University of Science and Technology, Wuhan 430074, China ), Zhang Zengchang( Xiangyang Teachers College, Xiangfan 441053, China ), Wang Xinwei( Department of Physics, Huazhong University of Sc

【机构】 华中理工大学物理系

【摘要】 以无机盐SnCl2·2H2O、(NH4)3Ce(NO3)6为原料,无水乙醇为溶剂,采用溶胶凝胶工艺制备了纯SnO2及SnO2∶Ce薄膜。研究了SnO2∶Ce薄膜的热分解晶化过程和Ce掺杂对SnO2薄膜电学及气敏性能的影响,发现SnO2∶Ce薄膜在常温下对H2S气体具有较好的气敏性能,对SnO2∶Ce薄膜的结构进行了表征

【Abstract】 Pure SnO 2 and SnO 2∶Ce thin films were prepared by the Sol Gel technique, using non alkoxide SnCl 2·2H 2O and (NH 4) 3Ce(NO 3) 6 as precursors, ethanol as solvent. The thermal decomposition and crystallization processes of SnO 2 and SnO 2∶Ce thin films and the effect of Ce dopant on the electrical and gas sensibility properties of SnO 2 thin films have been studied. We found that the SnO 2∶Ce thin film prepared by this method has very good as sensibility to H 2S at room temperature. The structural properties of SnO 2∶Ce thin film have been characterized

【基金】 国家自然科学基金,湖北省教委资助
  • 【文献出处】 中国稀土学报 ,JOURNAL OF THE CHINESE RARE EARTH SOCIETY , 编辑部邮箱 ,1997年01期
  • 【分类号】O614.432
  • 【被引频次】15
  • 【下载频次】156
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