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Ce掺杂对SnO2薄膜电学及气敏性能的影响
Effect of Ce Dopant on the Electrical and Gas Sensing Properties of SnO 2 Thin Films Prepared by the Sol Gel Technique
【摘要】 以无机盐SnCl2·2H2O、(NH4)3Ce(NO3)6为原料,无水乙醇为溶剂,采用溶胶凝胶工艺制备了纯SnO2及SnO2∶Ce薄膜。研究了SnO2∶Ce薄膜的热分解晶化过程和Ce掺杂对SnO2薄膜电学及气敏性能的影响,发现SnO2∶Ce薄膜在常温下对H2S气体具有较好的气敏性能,对SnO2∶Ce薄膜的结构进行了表征
【Abstract】 Pure SnO 2 and SnO 2∶Ce thin films were prepared by the Sol Gel technique, using non alkoxide SnCl 2·2H 2O and (NH 4) 3Ce(NO 3) 6 as precursors, ethanol as solvent. The thermal decomposition and crystallization processes of SnO 2 and SnO 2∶Ce thin films and the effect of Ce dopant on the electrical and gas sensibility properties of SnO 2 thin films have been studied. We found that the SnO 2∶Ce thin film prepared by this method has very good as sensibility to H 2S at room temperature. The structural properties of SnO 2∶Ce thin film have been characterized
【Key words】 Rare earth; Ce doped SnO 2 thin film; Gas sensibity; Sol Gel technique[Z;
- 【文献出处】 中国稀土学报 ,JOURNAL OF THE CHINESE RARE EARTH SOCIETY , 编辑部邮箱 ,1997年01期
- 【分类号】O614.432
- 【被引频次】15
- 【下载频次】156