节点文献
室温射频磁控溅射沉积ITO薄膜的研究
Properties of Indium Tin Oxide Thin Film Deposited by RF Magnetron Sputtering at Room Temperature
【摘要】 报道透明导电膜不加衬底温度、无需沉积后的退火工艺、用射频磁控溅射沉积氧化铟、锡(ITO)薄膜获得电阻率3×10-4Ω·cm,在可见光区平均透光率84%的优良性能.用扫描电子显微镜和X射线衍射法研究了ITO薄膜的结晶形貌和晶体结构
【Abstract】 The purpose of this letter is to demonstrate a simple technique for the deposition of Sn doped In 2O 3 (ITO) thin film by RF magnetron sputter without temperature control of substrate and without annealing. The film has resistivity as low as 3×10 -4 Ω·cm and optical transmittance of about 84 % in the visible range. The crystal shape and structure of the film are studied by the scan electronmicroscope and the x ray diffraction.
【基金】 国家自然科学基金
- 【文献出处】 厦门大学学报(自然科学版) ,JOURNAL OF XIAMEN UNIVERSITY(NATURAL SCIENCE) , 编辑部邮箱 ,1997年02期
- 【分类号】O484.1
- 【被引频次】20
- 【下载频次】308