节点文献
硬质合金YG8衬底直接沉积金刚石薄膜的探讨
RESEARCH OF DIAMOND FILM DEPOSITED DIRECTLY ON CEMENTED CARBIDE YG8 SUBSTRATE
【摘要】 在硬质合金衬底上直接沉积金刚石薄膜.总是伴随着石墨化过程.钴是促进石墨生长的积极因素。由于衬底温度决定氢原子的活性和钴的扩散方式.因而它是金刚石形核和生长的关键条件。在合适的衬底温度下,金刚石能形成均匀连续的薄膜。
【Abstract】 While diamond film is deposited directly on cemented carbide substrate the graphitization always happen. Cobalt is an active element which promotes graphite growth. Substrate temperature is a key factor which influences nucleation and growth of diamond because it determines the activity of atomic hydrogen and the diffusion way of cobalt. At appropriate substrate temperature, diamond grains can form uniform and continuous film
【关键词】 金刚石薄膜;
硬质合金;
石墨化;
热丝法化学汽相沉积;
【Key words】 diamond film; Cemented carbide; graphitization; HFCVD;
【Key words】 diamond film; Cemented carbide; graphitization; HFCVD;
- 【文献出处】 微细加工技术 ,MICROFABRICATION TECHNOLOGY , 编辑部邮箱 ,1997年02期
- 【分类号】TN304.055
- 【被引频次】2
- 【下载频次】49