【摘要】 简要报道了采用一种改进的低压金属有机物化学气相淀积（ＬＰＭＯＣＶＤ）方法制备ＧａＮｐｎ结蓝光光发射二极管（ＬＥＤ），介绍了ＬＥＤ的基本特性．这种ＬＥＤ具有良好的ＩＶ特性和光谱特性．室温下，在正向电压５Ｖ，正向电流３—２０ｍＡ的条件下，峰值波长依Ｍｇ的掺杂浓度和退火条件的不同而不同，分别在４２５ｎｍ，４３５ｎｍ和４８０ｎｍ附近，发射谱的半峰宽约为５０ｎｍ．更多还原

【Abstract】 GaN p n junction blue light emitting diodes have been fabricated using an improved type of low pressure metalorganic chemical vapor phase deposition(LP MOCVD).The diodes have good current voltage and spectra characteristics.At room temperature with a forward voltage of 5V and forward currents of 3mA to 20mA,peak wavelengths of 425nm,435nm and 480nm have been obtained,depending on the concentration of doped Mg and the annealing conditions.The full width at half maximun is about 50nm.更多还原