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PECVD纳米晶粒硅薄膜的可见电致发光
VISIBLE ELECTROLUMINESCENCE FROM SILICONNANOCRYSTALLITES PREPARED BY PLASMAENHANCED CHEMICAL VAPOR DEPOSITION
【摘要】 在用等离子体增强化学汽相淀积的嵌有纳米晶粒硅薄膜中观测到电致发光.发光谱处在500—800nm之间,它有两个分别位于630—680nm和730nm附近的峰,两个峰的强度与薄膜的电导率有密切关系.根据这种材料的结构特性对载流子的传导通道进行了讨论,并且对发光机制进行了初步解释
【Abstract】 We have observed visible electroluminescence (EL) from silicon nanocrystallites which are embedded in a Si∶H films prepared in a plasma enhanced chemical vapor deposition system. The EL spectra are in the range of 500nm to 850nm with two peaks located at about 630—680nm and 730nm respectively. We found that the intensity of EL peaks is related closely to the conductivity of the deposited films. The carrier conduction path is discussed in terms of the material structural characteristics, and a tentative explanation of the light emission mechanism is proposed.
【基金】 国家自然科学基金
- 【文献出处】 物理学报 ,ACTA PHYSICA SINICA , 编辑部邮箱 ,1997年06期
- 【分类号】O484.41
- 【被引频次】13
- 【下载频次】83