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GaS/GaAs界面电学性质研究
STUDIES OF ELECTRONIC PROPERTIES OF GaS/GaAs INTERFACE
【摘要】 报道了微波放电法在GaAs表面生长GaS薄膜.用电容电压法(CV)、伏安法(IV)以及深能级瞬态谱(DLTS)等测试手段对GaS/GaAs界面的电学性质进行了研究.GaS/GaAs界面的CV特性反映此处的界面特性比较好,界面态密度约为1012/(cm2·eV).DLTS的测试得到了与其一致的结果.另外,从IV曲线中漏电流的大小,估算出GaS的电阻率为1011Ω·cm
【Abstract】 A novel passivation film on GaAs surface has been grown by microwave sulfur glow discharge technique.Electronic properties of GaS/GaAs interface have been studied by C V,I V, and DLTS measurements. C V measurement shows that the properties of GaS/GaAs interface are nearly ideal and interface state density is about 10 12 /(cm 2·eV),which agrees with result from DLTS measurement.From leak current of MIS′s structure in I V spectra,the resistivity of GaS is estimated about 10 11 Ω·cm.
【基金】 国家自然科学基金和国家杰出青年科学基金资助的课题
- 【文献出处】 物理学报 ,ACTA PHYSICA SINICA , 编辑部邮箱 ,1997年03期
- 【分类号】O484.42
- 【被引频次】4
- 【下载频次】59