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纯CsI晶体发光特性

Luminescent Performances of Pure CsI Crystals

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【作者】 沈定中邓群袁湘龙张黎星殷之文

【Author】 SHEN Dingzhong; DENG Qun; YUAN Xianglong; ZHANG Liring; YIN Zhiwen(Shanghai Institute of Ceramics, Chinese Academy of Sciences Shanghai 200050 China)

【机构】 中国科学院上海硅酸盐研究所!上海200050

【摘要】 测量了用Stockbager方法生长的纯CsI晶体的光学透射、X射线激发的发射谱、能谱特性和衰减时间特性.该晶体有二个闪烁分量,峰值位于310nm的发光分量是快分量(<40ns),450um处的发光分量是慢分量(~2.4μs).慢分量的发光强度不稳定,并受晶体中缺陷I-空位的影响较大.文中还给出快、慢发光强度比值91.8%.

【Abstract】 The optical transmission, X-ray excited emission, energy spectra and decay time characteristics were measured for pure CsI crystals grown by Stockbarger process. The results show thatthe crystals has two scintillation components: a fast component peaked at 310um with <40nsdecay time and a slow component at 450um with~2.4μs. The slow emission intensity is not stableand considerably thectcd by I- vacancy defects in the crystal. The intensity ratio of fast to slowcomponent obtAlNed is 91.8%.

【关键词】 纯CaI晶体快闪烁体晶体缺陷
【Key words】 pure CsI crystalfast scintillatorcrystal defect
  • 【文献出处】 无机材料学报 ,JOURNAL OF INORGANIC MATERIALS , 编辑部邮箱 ,1997年03期
  • 【分类号】O73
  • 【被引频次】6
  • 【下载频次】220
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