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用扫描电镜直接观察变形材料中的位错结构──[001]取向铜单晶疲劳位错结构的研究

DIRECT OBSERVATION OF DISLOCATION STRUCTURE IN DEFORMED MATERIALS BY SEM──Dislocation Structure in a Fatigued [001] Cu Single Crystal

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【作者】 宫波陈道伦苏会和王中光

【Author】 Gong Bo;Chen Daolun; Su Huihe; Wang Zhongguang(State Key Laboratory for Fatigue and Fracture of Materials, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110015)

【机构】 中国科学院金属研究所材料疲劳与断裂国家重点实验室!沈阳110015

【摘要】 用扫描电镜(SEM)的电了通道讨度(ECC)技术研究了[001]取向铜单晶中的疲劳位错结构结果表明,SEMECC技术不仅可以真实地、全面地显示疲劳位错组态,而且还揭示了表面出现的宏观形变带与位错结构的对应关系.

【Abstract】 The dislocation configuration in a fatigued [001] copper single crystal has beenstudied by using a scanning electron microscope (SEM) with the electron channeling contrast(ECC) technique. It has been shown that this unique technique is efficient to reveal not onlythe fatigue dislocation structures in a large scale but also the relationship between the surfacedeformation bands and inside dislocation structures. It has been proven to be a powerful toolto connect macrostructures and microstructures in fatigued materials.

【基金】 国家自然科学基金!19392300-4
  • 【文献出处】 金属学报 ,ACTA METALLRUGICA SINICA , 编辑部邮箱 ,1997年06期
  • 【分类号】TB30
  • 【被引频次】8
  • 【下载频次】334
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