【摘要】 研究了用硅烷－氢（ＳｉＨ４／Ｈ２）混合气体在铜表面获得的渗硅层的抗氧化性，结果表明，纯铜表面渗硅层的形成提高了材料的抗高温氧化性能。本文对渗硅层的氧化机理进行了探讨。更多还原

【Abstract】 The anti oxdation property of siliconized layer formed by using the reaction of SiH 4/H 2 mixture with copper was studied The results show that the formation of Si diffusion layer enhances coppers anti oxidation property In addition,the oxidation thermodynamics and oxidation kinetics of the Si diffusion layer were analysed.After high temperature oxidation(600℃),the compact and homogeneous SiO 2 layer on siliconized copper forms,which is effective to reduce the diffusion of oxygen atoms into the matrix(copper)because of the low diffusion coefficient of oxygen in silica. But the oxide layer formed at ambient temperature is combined by silica and oxide of copper,and then the oxygen can diffuse more easily through this layer Hence,there is no appreciable difference of the anti oxdation property between copper and the siliconized copper at ambient temperature更多还原