【摘要】 报道利用低压金属有机化学气相沉积（LP－MOCVD）技术在（001）InP衬底上生长InAs自组装量子点的结果，用光致发光技术观察到较强的室温光荧光谱，其峰值波长约为1603um，分布在1300um~1700um范围内，半高峰宽为80meV更多还原

【Abstract】 The present paper covers the results of room temperature photoluminescence (PL) emis-sion from InAs self-assembled quantum dots (QDs) in the 1 300 nm~1700 nm spectral region. The low pressure MOCVD was used to grow lnAs QDs on an InP substrate. Preliminary characterization was performed using PL and scanning electron microscopy (SEM). PL peaks are centered at 1 603nm, the full width at half-maximum (FWHM) is about 80 meV.更多还原