【摘要】 用含Ｚｎ的固态杂质源，在化合物半导体ＧａＡｓ基片上进行了连续波（ＣＷ）１０．６μｍ激光诱导扩散，做出了Ｐ－Ｎ结。分别利用扫描电子显微镜和二次离子质谱仪对扩散样品进行扩散区形貌分析和杂质分布研究，给出了结深ｘｊ、杂质浓度分布Ｃ（ｘ，ｔ，Ｔ）等性能参数和扩散时间ｔ、温度Ｔ等工艺参数之间的关系，获得了亚微米的扩散结结深及１０２０ｃｍ－３量级的表面掺杂浓度更多还原

【Abstract】 The P N junctions were produced by continuous wave (CW) CO 2 induced diffusion of Zn into a GaAs substrate using a solid state diffusion source. After the samples were exposed to the laser radiation, the features of the exposed region were studied by scaning electron microscopy (SEM), and the dopant profiles were examined using a secondary ion mass spectrometry (SIMS). The performance parameters of the P N junctions such as x j and C(x,t,T) are presented as functions of the diffusion time t and temperature T. The experimental results show that the junction depth x j reaches submicron and the dopant concentration is of the order of 10 20 cm -3 .更多还原