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PTCR半导陶瓷老化后的复阻抗研究
The Complex Impedance of PTCR Semiconductor Ceramics after Aging
【摘要】 根据PTCR半导体陶瓷在湿热条件下的老化试验结果,对PTCR半导体陶瓷老化前后分别提出了不同的等效电路模型,通过对阻抗-频率关系曲线的测量,求出了PTCR半导瓷的特性参数.计算结果表明,老化后室温阻值增加,这主要是电极氧化引起的.对实验结果进行了物理本质的初步探讨.
【Abstract】 According to the aging test results in humidity and heat environment, different equivalent circuits for PTCR semiconductor ceramics before and after aging are proposed, respectively. the characteristic parameters of PTCR semiconductor ceramics have been obtained from the impedance frequency curves measured. Results of calculation show that the oxidization of electrodes is the main factor that causes the increase of the resistance at room temperature after aging. The intrinsic physical nature of the experimental results is preliminarily discussed.
- 【文献出处】 华中理工大学学报 ,JOURNAL OF HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY , 编辑部邮箱 ,1997年06期
- 【分类号】TN304
- 【被引频次】2
- 【下载频次】71