【摘要】 应用ＸＰＳ技术研究了掺杂ＳｎＯ２薄膜吸附Ｈ２前后电子结构的变化，观测到掺杂剂Ｓｂ和Ｐｄ化学状态的明显改变，发现掺杂剂Ｓｂ对ＳｎＯ２薄膜Ｆｅｒｍｉ能级的影响；同时，分析了掺杂Ｓｂ和Ｐｄ对ＳｎＯ２薄膜气敏特性的影响机制。更多还原

【Abstract】 In this paper,the effects of H 2 adsorption on the electronic structures of doped SnO 2 thin films were studied by X-ray photoelectron spectroscopy (XPS).The changes of the chemical states of the dopants Sb and Pd were investigated;The influence of the dopant Sb on the Fermi level of SnO 2 was observed.At the mean time,the relationship between the electronic structures and the gas-sensitivity of doped SnO 2 was proposed.更多还原