【摘要】 通过研究ＧａＡｓ衬底上不同厚度ＩｎＡｓ层光致发光的退火效应，发现它和应变量子阱结构退火效应相类似，ＩｎＡｓ量子点中的应变使退火引起的互扩散加强，量子点发光峰蓝移．量子点中或其附近一旦形成位错，其中的应变得到释放，互扩散现象就不明显了，退火倾向于产生更多的位错，量子点的发光峰位置不变，但强度减弱．更多还原

【Abstract】 The annealing effects of InAs layers with different thicknesses in a GaAs matrix were investigated. The diffusion enhancement by strain, which is well estabished in strained quantum wells, occurs in InAs/GaAs quantum dots(QDs). A shift of the QD luminescence peak towards higher energies results from this enhanced diffusion. When a significant portion of the strain in the structures is relaxed by misfit dislocations, the diffusion becomes negligible, and annealing tends to generate additional dislocations. By these why the QD peak energy is weakly affected and the luminescence intensity decreases could be explained.更多还原