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质子和γ射线辐照对Bi-系超导体零电阻温度的影响

INFLUENCE OF PROTON AND GAMMA IRRADIATIONON THE T∞ OF Bi-SYSTEM SUPERCONDUCTORS ZHAO XINJIE YU JINNAN WANG YUZHUCHEN YIREN ZHANG ZONGHAI

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【作者】 赵新杰郁金南王玉珠陈伊轫张崇海

【Author】 ( China Institute of Atomic Energy)

【机构】 中国原子能科学研究院

【摘要】 20MeV质子辐照固态反应法和硝酸盐溶胶凝胶法制备的Bi-系超导体,伴随有核激发的γ及β射线辐照。在线测量的结果表明超导样品的零电阻温度T是增加的,但是随着时间的推移T值逐渐下降。我们测量了超导体的T和γ射线随时间的变化情况。发现T在伴随γ射线辐照下首先增加,而后逐渐下降。这表明γ射线对超导体的T存在两方面的影响,一是激发样品中的载流子,激发态的载流子构成载流子对,其能隙较宽,提高了:二是产生辐照缺陷,破坏超导体的微观结构,降低T质子辐照在超导样品中产生很多缺陷,降低T。

【Abstract】 Bi-system superconductors, prepared by solid state reaction method and nitrate method, were irradiated by 20 MeV proton and gamma ray caused by proton irradiation . The T∞ ( zero re- sistance temperature ) and gamma ray intensity was measured to show that T∞ increases first by gamma ray irradiation and then decreses gradually . The results indicated that there are two com- petive effects on the sample’s Tc during gamma irradiation . First is the excited carrier composed Cooper- pairs, with higher energy gap to increase T∞ Second is the irradiation defect to destroy superconductic mi- crostructue, and hence decrese Tc . The results of proton irradiation showed the monotonic decrease on T c .

  • 【文献出处】 核科学与工程 ,CHINESE JOURNAL OF NUCLEAR SCIENCE AND ENGINEERING , 编辑部邮箱 ,1997年03期
  • 【分类号】TL816.2
  • 【被引频次】1
  • 【下载频次】68
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