【摘要】 利用分子束外延生长法生长出了ＧａＡｌＡｓ／ＧａＡｓ梯度折射率分别限制单量子阱结构材料。对样品进行了光荧光谱、双晶Ｘ射线衍射和电化学电容－电压分布测量。实验结果表明，样品质量达到了设计要求。利用该材料制作的激光二极管获得了初步结果更多还原

【Abstract】 The GaAlAs/GaAs material with gradient refraction index separate confinement single quantum well structure has been grown by MBE method. PL spectrum, double crystal X ray diffraction and electrochemical CV profile in the sampls have been measured. The experimental results show that sample′s quality has reached requirement of design. Manufacture of laser diodes with the material has obtained preliminary result.更多还原