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全离子注入C波段功率单片放大器及内匹配功率单片放大器
C-band GaAs Power MMICs and Internally Matched MMICs
【摘要】 报道了全平面C波段功率单片放大器及四单片合成放大器研究结果。单片放大器采用全离子注入工艺,均匀性好,平均成品率40%,可靠性高。工作频率4.7—5.2GHZ,中心频率5.0GHz处输出功率2.5W,增益15dB,功率附加效率31.5%。单片放大器芯片面积2.8mm×2.0mm,四路合成的4×MMIC频率范围不变,中心频率4.95GHz处输出功率8.2W,增益13dB,功率附加效率26%,四路合成效率接近80%。实验结果与理论预测基本吻合。
【Abstract】 A two-stage C-band power amplifier MMIC has been designed andfabricated by using ion-implant technology. The MMIC delivers power of 2. 2-2. 5W with gain of 15 dB over the band of 4. 7-5. 2 GHz. Power-added efficiency (PAE)is 31. 5% at 5. 0 GHz. The chip size is 2. 8 mm×2. 0 mm. An amplifier consisted ofsuch four MMICs parallelly connected by using Wilkinson divider/combiner offersoutput power of 7. 2-8. 2 W with gain of 13 dB in the frequency range of 4. 7-5. 2GHz and PAE of 26% at 4. 95 GHz.
- 【文献出处】 固体电子学研究与进展 ,RESEARCH & PROGRESS OF SOLIA STATE ELECTRONICS , 编辑部邮箱 ,1997年03期
- 【分类号】TN72
- 【下载频次】45