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S波段硅脉冲功率晶体管
S-band Silicon Pulsed Power Transistor
【摘要】 报道了一种自对准T形电极结构的硅脉冲功率晶体管实验结果。在2GHz短脉冲工作条件下,该晶体管输出功率70W,增益8.5dB,集电极效率50%。
【Abstract】 This paper presents the experimental results of a silicon pulsed power transistor with self-aligned T-shaped electrode structure. The transistor produces 70 Watts of output power with 8.5 dB of gain and 50% collector efficiency at 2 GHz and for short pulse operation.
【关键词】 功率晶体管;
双极晶体管;
多晶硅;
离子注入;
【Key words】 Power Transistor; Bipolar Transistor; Polysilicon; Ion Implan-tation;
【Key words】 Power Transistor; Bipolar Transistor; Polysilicon; Ion Implan-tation;
- 【文献出处】 固体电子学研究与进展 ,RESEARCH & PROGRESS OF SOLIA STATE ELECTRONICS , 编辑部邮箱 ,1997年01期
- 【分类号】TN32
- 【被引频次】3
- 【下载频次】28