【摘要】 研究了超高真空电子束蒸发法制备的Ｃｏ／Ｃｕ多层膜中过渡层Ｃｒ、磁性金属Ｃｏ层和非磁性金属Ｃｕ层厚度等对巨磁电阻效应的影响。结果表明：适当的Ｃｒ过渡层厚度有利于获得大的巨磁电阻效应，但过渡层太厚时由于其分流效应又导致巨磁电阻效应减小；通过优化Ｃｏ和Ｃｕ层厚度，单个Ｃｏ／Ｃｕ／Ｃｏ三明治结构中巨磁电阻效应可达７％；适当增加重复周期后，可获得室温下饱和磁场小于２５０Ｏｅ，巨磁电阻效应值达１１％的Ｃｏ／Ｃｕ多层膜结构，其热稳定性高于４００℃。更多还原

【Abstract】 The effect of thickness of Cr buffer layer, Co magnetic layer and Cunonmagnetic layer on the giant magnetoresistance (GMR) in Co/Cumultilayers fabricated by UHV electron beam evaporation was studied It has been shown that optimized thickness of the Cr buffer layer is necessary to obtain high GMR value But very thick Cr buffer layer would result in a reduction of GMR value due to its shunting effect By optimization of the thickness of Co and Cu layers, a GMR value as large as 7 % was found in a single Co/Cu/Co sandwich structure By increasing stacking number to 6, a maximum GMR value of 11 % at room temperature has been obtained with a saturation field of 250 Oe in Co/Cu multilayers, which is thermally stable up to 400℃更多还原