节点文献
真空磁过滤弧沉积碳氮薄膜的研究
INVESTIGATION ON CN x THIN FILMS PREPARED BY FILTERED ARC DEPOSITION
【摘要】 本文采用真空磁过滤弧沉积技术,在Si(111)、石英及Ti/C衬底上制备得到非晶碳氮(CNx)薄膜。采用卢瑟福背散射分析对薄膜的面密度及N含量进行定量计算。用紫外-可见透射光谱与红外反射光谱研究了薄膜的光学性能。结果表明:随着薄膜中氮含量的增加,碳氮薄膜的光学禁带宽度减小,红外反射率增加。另外,就不同氮气分压对薄膜结构的影响进行了研究。
【Abstract】 CN x films on silicon (111) wafer, quartz and Ti/C substrate with nitrogen concentration up to 20 at% have been prepared by a new plasma deposition technique, filtered arc deposition. The nitrogen concentration and area density of the films are measured by Rutherford back scattering. The optical properties of the CN x films are also characterized by ultraviolet visible transmission and infrared reflective spectrometers. Results indicate that the optical band gap of the CN x films is decreased with the increasing nitrogen concentration, accompanied with the reflectance increase of the films. Furthermore, the influence of N 2 partial pressure on the structure of the films with different nitrogen concentration is discussed.
- 【文献出处】 功能材料与器件学报 ,JOURNAL OF FUNCTIONAL MATERIALS AND DEVICES , 编辑部邮箱 ,1997年01期
- 【分类号】O484
- 【被引频次】4
- 【下载频次】94