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AlN基片金属化Ag-Pd厚膜导体研究
Study of Ag Pd Thick Film Conductor for AlN Substrate Metallization
【摘要】 在AlN基片上采用Ag-20%Pd浆料实现了厚膜金属化布线。膜层的附着力、表面电阻、可焊性及耐焊料的腐蚀能力都不亚于Al2O3基片上的情况。在烧结过程中,熔化的玻璃料向基片表面流动富集,而导体粉料变成网状结构。结果,界面附近的玻璃与导体层之间形成“交联”结构,而与基极之间形成“镶嵌”结构。为了获得这种附着性能良好的界面结构,玻璃料应具有500~600℃合适的软化点,且能润湿金属及AlN基片。
【Abstract】 The Ag 20%Pd thick film metallization conductors on AlN substrate were studied. The conductor films on AlN substrate have performances almost as good as on Al 2O 3 substrate with regard to adhesion strength,reliability,sheet resistivity,soldering wettability and erosion resistance. During sintering,the glassy frit melts and flows towards the substrate,while the Ag Pd powder sinters together to form a mesh structures. As a result,an intricated interlock structure between Ag Pd conductor layer and glass, and an inlay structure between glass and AlN substrate were formed. In order to achieve this microstructure at the conductor substrate interface,it is necessary that the glass has a proper softening point ( about 500~600℃) and is able to wet the metals and the AlN substrate.
- 【文献出处】 功能材料 ,JOURNAL OF FUNCTIONAL MATERIALS , 编辑部邮箱 ,1997年04期
- 【分类号】TG132.2
- 【被引频次】8
- 【下载频次】179