【摘要】 介绍了测定a－Si：HTFT闽值电压的实验方法。重点研究了改变a－SiNx：H薄膜淀积时反应气体NH3／SiH4流速比以及a－SiNx:H膜厚对a－Si：HTFT阈值电压的影响。对实验结果进行了分析。实验结果表明：a－Si:HTFT的阈值电压随a－SiNx：H的膜厚增加而增大；增大X－SiNx：H薄膜淀积时NH3／SiH4气体流速比，可明显减小a-Si:HTFT的阈值电压。更多还原

【Abstract】 The experiment method used for determining the threshoId voltage of a-Si : H TFT is introduced. The effect of the thickness of a-SiNx: H film on the threshold voltage of a-Si: H TFT is investigated. The influence of the reactive gas flow rate ratio,under which the a-SiNx: H film was deposited,on the threshold voltage of a-Si: H TFT is emphatically investigated- The experiment results show that the threshold voltage of a-Si: H TFT is increased with increasing the thickness of the a-SiNx: H film,and reduced apparently with increasing the reactive gas flow rate ratio under which the a-SiNx: H films was deposited更多还原