节点文献
MBE自组织生长多层竖直自对准InAs量子点结构的研究
THE INVESTIGATION ON THE MULTILAYER VERTICAL ALIGNED InAs QUANTUM DOTS GROWN BY MBE
【摘要】 利用ＭＢＥ方法在（００１）ＧａＡｓ衬底上生长了多层竖直自对准ＩｎＡｓ量子点结构．透射电子显微镜的观察表明，多层量子点成一系列柱状分布．同单层量子点相比，多层量子点的光荧光谱线发生红移．这表明由于量子点中载流子波函数的扩展和交迭，柱中量子点之间有耦合现象发生．光荧光谱线半高宽随温度的反常变化说明载流子还会在邻近柱中隧穿
【Abstract】 Multilayer InAs quantum dots (QD) have been grown by MBE on (001) GaAs substrates. TEM observation shows several vertical aligned InAs dot columns. Compared with single InAs QD layer structure, the red shift of the PL wavelength is found for multilayer InAs QD layer structure, which indicate the coupling effect in quantum dots located in the columns. The anomalous decrease of FWHM is attributed to the carrier tunneling between nearby columns.
【基金】 国家自然科学基金
- 【文献出处】 发光学报 ,CHINESE JOURNAL OF LUMINESCENCE , 编辑部邮箱 ,1997年03期
- 【分类号】TN304.054
- 【被引频次】3
- 【下载频次】80