【摘要】 提出用高频C－V法测量半导体异质结中集中分布的界面态的能级位置的方法，并分析了测试温度以及由异质结的能带偏移所引起的载流子积累对测试结果的影响．用这一方法对GaS／GaAs和Znse／GaAs两种异质结进行了测试，发现在这两种异质界面上均存在集中分布的界面态，其能级位置分别为Ec-0.41eV,Ec-0．51eV．更多还原

【Abstract】 In this paper, the capactitance induced by the interface defects at the heterojunction is theoretically analyzed and the high frequency C-V measurement is presented to obtainthe activation energies of concentrated interface defects. The effect of temperature is discussed. The influence on the experimental results which is caused by the carrier accumulation at the interfaCe due to band discontinuity is also considered. The interface defectsat GaS/GaAS and ZnSe/GaAs heterojunctions have been measured by this method.更多还原