节点文献
一种高效率的原子操纵方法
A Effective Method of Atomic Manipulation
【摘要】 我们在恒流模式和扫描偏压不变的条件下，通过提高隧道电流成功地在Ｓｉ（１１１）７×７表面实现了原子操纵，这种方法具有较高的成功率和较快的操纵速率。其作用机理是：当偏压小于０．５Ｖ时，化学相互作用成为针尖和样品之间的主要作用；而当偏压大于０．８Ｖ时，场蒸发的影响则成为一个关键因素。
【Abstract】 In this paper,an effective method of atomic manipulation was reported.In the fabrication process,the tunneling current and the bias voltage were kept constant,but the tunneling current was increased to 30—50nA.The fabrication mechanism was discussed.When the bias voltage was lower,chemical interaction was dominant,but at higher bias voltage field evaporation played an important role.
【关键词】 扫描隧道显微镜；
原子操纵；
Si（111）7×7再构；
【Key words】 scanning tunneling microscope； atomic manipulation； Si(111)7×7 reconstructionNano lithography by Field Evaporation of Au Tip in The Configuration of STM in Atmosphere$$$$Li Zhiyang； Liu Wu； Huang Guangming； Zhang Aidong； Li Xingjiao*(Department of Physics； Huazhong Normal University； Wuhan 430070) (WT5”BZ〗(*Department of Solid Electronics； Huazhong University of Science and Technology； Wuhan 430074)) Abstract Atom mounds were formed by appling 4V； 300ns voltage pulses on Au tip in scanning tunneling microscope (STM) in atomsphere.Each mound measures about 30 nm in diameter and 1 2 nm in height.With the aid of this； we succeed in writing nanometer scale characters.There exists a narrow threshold field and we refer it a field evaporation process.Both positive and negative ions could be field evaporated.The re examination of charge exchange model for the field evaporation in STM and experiments on other metals will be published elsewhere. Keywords STM； field evaporation； nano lithography；
【Key words】 scanning tunneling microscope； atomic manipulation； Si(111)7×7 reconstructionNano lithography by Field Evaporation of Au Tip in The Configuration of STM in Atmosphere$$$$Li Zhiyang； Liu Wu； Huang Guangming； Zhang Aidong； Li Xingjiao*(Department of Physics； Huazhong Normal University； Wuhan 430070) (WT5”BZ〗(*Department of Solid Electronics； Huazhong University of Science and Technology； Wuhan 430074)) Abstract Atom mounds were formed by appling 4V； 300ns voltage pulses on Au tip in scanning tunneling microscope (STM) in atomsphere.Each mound measures about 30 nm in diameter and 1 2 nm in height.With the aid of this； we succeed in writing nanometer scale characters.There exists a narrow threshold field and we refer it a field evaporation process.Both positive and negative ions could be field evaporated.The re examination of charge exchange model for the field evaporation in STM and experiments on other metals will be published elsewhere. Keywords STM； field evaporation； nano lithography；
- 【文献出处】 电子显微学报 ,Journal of Chinese Electron Microscopy Society , 编辑部邮箱 ,1997年06期
- 【分类号】TH742
- 【下载频次】58