【摘要】 本文在实验基础上，对多孔硅的形成形貌学进行了研究。用日立Ｓ－７５０型扫描电镜观测了不同条件下生长的多孔硅的正面和侧面孔的形貌。对得到的实验结果进行了较为详细的分析，为进一步研究多孔硅在半导体器件方面的应用提供了一定的基础更多还原

【Abstract】 The formation and topography of porous silicon was studied based on experiments.The topography of top view and lateral view of holes of porous silicon grown under different conditions was observed,by using Hitachi S 750 SEM.The experimental results are useful for further research on the application of porous silicon to the semiconductor device.更多还原