节点文献
S波段硅脉冲功率晶体管
S-Band Silicon Puled Power Transistor
【摘要】 报道了一种自对准T形电极结构的硅脉冲功率晶体管的实验结果.在2GXz短脉冲工作条件下,该晶体管输出功率70W,增益8.5dB,集电极效率50%.
【Abstract】 This paper presents the experimental results of a silicon pulsed power transistor with self-aligned T-shaped electrode structure. The transistor produces 70 Watts of output power with 8.5dB of gain and 50 % collector efficiency at 2GHz, for short pulse operation.
【关键词】 功率晶体管;
双极晶体管;
多晶硅;
离子注入;
【Key words】 power Transistor; Bipolar Transistor; Polysilicon; Ion Implantation;
【Key words】 power Transistor; Bipolar Transistor; Polysilicon; Ion Implantation;
- 【文献出处】 电子器件 ,Journal of Electron Devices , 编辑部邮箱 ,1997年01期
- 【分类号】TN323.4
- 【下载频次】8