【摘要】 采用热丝CVD法在硅衬底上合成了金刚石薄膜，研究了工艺参数对金刚石形核与长大的影响规律。形核密度随甲烷深度的增加和抛光膏粒度的减小而增加，随衬底温度上升而增加至极值后下降，衬底温度过低，形核密度增加但形核为球状。金刚石的生长分为初始阶段，均速生长阶段和稳定生长阶段。生长速率与衬底表面氢原子浓度有关，由键合速度和扩散速度共同决定。更多还原

【Abstract】 Diamond filrns have been synthesized on silicon subtrates by hot filament chemicalvapor deposition. The influence of deposition parameters on the nucleation and growth ofdiamond films were investigated. The results show that the nucleation density increased withincreasing methane concentration and decreasing the grain size of polishing paste. With theincrease in substrate temperature, the nucleation density increased up to 800℃ and thendecreased. The growth of diamond crystal can be divided into initial incubation, growth atconstant speed and steady growth. An expression of the growth rate based on a model forsurface reaction was deriked. The growth rate of diamond particles relates to the concentrationof hydrogen on substrate surface, transportation of particles and surface chemical reaction.更多还原