节点文献
溅射SiO2薄膜的电气性能
Electrical Performance of Sputtering an SiO2 Thin-film
【摘要】 本文介绍了一种在金属弹性体和应变电阻之间制作SiO2绝缘膜的方法,并对基底表面状况,溅射条件对SiO2膜绝缘性能的影响做了实验研究 实验结果表明,在良好的基底表面,合适的基底温度和调谐偏压下可制备出性能良好的SiO2膜.
【Abstract】 The paper introduces the method of fabricating an SiO2 insulator film between a strain resistance and a metal elastic body. Meanwhile, we have made two aspects of research. One is the appearance of substrate surface, the other is that sputtering condition affects electric performance of SiO2 insulator film. Experimental results show: superper-formance SiO2-film can be fabricated on condition of good substrate surface, appropriate substrate temperature and tuning bias voltage.
- 【文献出处】 传感器世界 ,Sensor World , 编辑部邮箱 ,1997年04期
- 【分类号】TN304.05
- 【被引频次】4
- 【下载频次】67