【摘要】 用磁控溅射镀膜方法，制成了巨磁电阻自族间多层膜Ta／NiFe／Cu／NiFe／FeMn／Ta.它具有优良的特性.其室温磁电阻比率MR＞2％，自由层矫顽力Hc1＜160A／m，自由层零磁场漂Hf＜800A／m和钉扎层交换场Hex≈20×103A／m.作为新型磁功能材料，它满足高灵敏磁性传感器和硬盘读出头的要求.对多层膜制备的方法也作了系统研究，并讨论了缓冲层和钉扎层的制备工艺和微结构对磁性能的影响.更多还原

【Abstract】 The spin valve multilayer, consisting of Ta/NiFe/Cu/NiFe/FeMn/Ta, with giant magnetoresistance(GMR) has been successfully produced by magnetron sputtering. It is Possessed of good properties .The magnetoresistance ratio MR>2 % at room temperature, the coereivity of free layer Hcl< 160 A / m, shift field Hf < 800 A / m and the biasing exchange field Hex 20 x 103 A / m. As a new magnetic functional malarial, these properties can meet the requirement for preparation of magnetic field sensors with high sensitivity, for example in magnetic recording magnetoresistance read head.更多还原