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碲镉汞表面氧化特性的光电子能谱研究
Study on Oxidative Characterization of HgCdTe Surface by XPS
【摘要】 利用X射线光电子谱(XPS)对HeCdTe表面氧化特性进行了研究,对不同工艺过程中的HeCdTe表面进行了测量、分析,结果表明流镉汞表面的自身氧化与工艺密切相关,说明HgCdTe表面钝化前的预处理直接影响钝化层/HgCdTe的界面特性.
【Abstract】 HgCdTe surface oxidative characterization has been studied by X-ray photoelectron spectroscopy (XPS). HgCdTe surface exposed by various processing steps has been measured and analysized. The results show that the native oxide film on HgCdTe is relative to the processing steps. It shows that the pre-treatment before HgCdTe surface passivation affects the passivant/HgCdTe interface properties.
【基金】 国防重点预研项目
- 【文献出处】 半导体学报 ,CHINESE JOURNAL OF SEMICONDUCTORS , 编辑部邮箱 ,1997年12期
- 【分类号】TN21
- 【被引频次】2
- 【下载频次】53